Abstract
High voltage power pulses with adjustable fall time and pulsewidth are of great significance, especially in Q-switched laser applications. In this article, a high-speed high-voltage pulse generator based on programable multinarrow pulses drive method for series metal oxide semiconductor field-effect transistors is proposed to realize smooth and controllable falling slopes output. The designed system integrates a microcontroller unit, a programmable delay line array, multinarrow drive pulses, and an isolated gate drive circuit, which collectively facilitate both logic control and robust driving capabilities. The operation principles of the isolated gate drive circuit and the strategies for adjusting fall times are analyzed in detail. In experiments, adjustable fall times in the range of 40–220, 30260, and 35–220 ns were achieved across a 30 pF capacitor, 10 kΩ resistor, and 3.3 μ H inductor, respectively. Furthermore, a wide adjustable pulsewidth range of 150 ns–400 ms at the maximum amplitude of ±3 kV was obtained. These results prove that this multinarrow pulses drive method is feasible and effective for programmable control of the falling slopes, and can be further applied in obtaining adjustable rising edges. As well as that, this generator is suitable for high-speed high-voltage pulse applications, especially where there are special requirements for pulsewidth and falling slopes.
Funding Information
  • National Natural Science Foundation of China (52275524)
  • 2022 Harbin Institute of Technology Original Frontier Exploration Fund (HIT.OCEF.2022015)

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