Influence of carrier lifetime control process in superjunction MOSFET characteristics
Authors:
- 1 June 2014
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10636854,p. 87-90
Abstract
This paper reports device characteristics of superjunction (SJ) MOSFETs employed with platinum (Pt) doping or electron irradiation processes for high speed recovery operation of the internal body diode. For the inverter application, high speed recovery operation of the internal body diode is necessary. 600 V-class SJ-MOSFETs were fabricated with a lifetime control process. In this paper, the influence of the carrier lifetime control process upon the on-resistance, leakage current and withstanding capability are reported. The lifetime control process modulates the static characteristics, and it is difficult to obtain the high speed operation with trr <; 100 ns maintaining both low on-resistance and low leakage current. However, the withstanding capability is not problematic due to suppressing the carrier concentration by the short lifetime.Keywords
This publication has 3 references indexed in Scilit:
- 600V-class Super Junction MOSFET with High Aspect Ratio P/N Columns Structure2008
- A new generation of high voltage MOSFETs breaks the limit line of silicon2002
- Theory of Semiconductor Superjunction DevicesJapanese Journal of Applied Physics, 1997