Efficient electron-beam-deposited ITO/n-Si solar cells
Authors:
- 1 July 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (7) , 4972-4974
Abstract
Indium tin oxide/silicon heterojunction solar cells with power conversion efficiencies of 10% in AM1 solar spectrum were fabricated. The indium tin oxide (ITO) films were deposited onto n‐type silicon by electron‐beam evaporation of a mixture of 90 : 10 molar% In2O3 : SnO2 powder. As in SnO2/n‐Si cells, the efficiencies of these cells depend upon the angle of incidence of the ITO vapor stream to silicon. We have found the photovoltaic properties of these cells to be very similar to those of SnO2/n‐Si devices.Keywords
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