Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition
Authors:
- 9 March 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (10) , 1238-1240
Abstract
Arsenic dimers and multilayers are shown to exist on (001)GaAs surfaces under atmospheric pressure (AP) organometallic chemical vapor deposition (OMCVD) conditions. We obtained reflectance-difference spectra from surfaces in AP H2 that are equivalent to those obtained from the (2×4) and disordered-c(4×4) reconstructions prepared in ultrahigh vacuum by molecular beam epitaxy. Implications for models of OMCVD growth.Keywords
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