Method for Fabricating Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Copper Source and Drain Electrodes
- 5 February 2015
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 36 (4) , 342-344
Abstract
We revealed a novel method to fabricate amorphous indium-zinc-oxide (a-IZO) thin-film transistors (TFTs) with inverted staggered back-channel-etch structure and copper (Cu) source/drain (S/D) electrodes. In particular, a gray-tone mask was used to define the S/D electrodes and active layer. The a-IZO layer acted not only as the active layer but also as the adhesive layer of Cu electrodes due to the good adhesion between Cu and a-IZO films. The presented TFTs exhibited a high saturated mobility of 12.2 cm 2 /Vs, a threshold voltage of -0.4 V, and a low subthreshold swing of 0.22 V/decade. The good electrical performance and reliability were attributed to the good contact property between Cu electrodes and a-IZO layer and very little Cu atoms diffusing into the channel layer.Keywords
Funding Information
- National Natural Science Foundation of China (51173049, 61036007, 61401156, 61306099)
- National Laboratory for Infrared Physics Open Project (M201406)
- Guangdong Innovative Research Team Program ((No. 201101C0105067115))
- China Post-Doctoral Science Foundation (2014M552197)
This publication has 14 references indexed in Scilit:
- Self-formed copper oxide contact interlayer for high-performance oxide thin film transistorsApplied Physics Letters, 2014
- 33.1: Channel‐Etched C‐Axis Aligned Crystalline Oxide Semiconductor FET Using Cu WiringSID Symposium Digest of Technical Papers, 2014
- Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistorScientific Reports, 2014
- High performance Zn–Sn–O thin film transistors with Cu source/drain electrodePhysica Status Solidi (RRL) – Rapid Research Letters, 2013
- Effects of Metal Electrode on the Electrical Performance of Amorphous In–Ga–Zn–O Thin Film TransistorJapanese Journal of Applied Physics, 2012
- The Deterioration of a-IGZO TFTs Owing to the Copper Diffusion after the Process of the Source/Drain Metal FormationJournal of the Electrochemical Society, 2012
- Metal Reaction Doping and Ohmic Contact with Cu-Mn Electrode on Amorphous In-Ga-Zn-O SemiconductorJournal of the Electrochemical Society, 2011
- Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistorsJournal of Applied Physics, 2009
- First-principles study of adhesion atinterfacesPhysical Review B, 2003
- Enhanced adhesion of copper to dielectrics via titanium and chromium additions and sacrificial reactionsThin Solid Films, 1995