The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy
- 25 November 2008
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 19 (50) , 505701
Abstract
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-three-dimensional (quasi-3D; Q3D) and three-dimensional (3D) QDs, whose volume density evolution is quantitatively described by a classical rate-equation kinetic model. The volume density of small Q3D QDs decreases exponentially with time during the interruption, while the single-dot mean volume of the large QDs increases by Ostwald ripening. The kinetics of growth involves the conversion of Q3D to 3D QDs at a rate determined by the superstress and the participation of the wetting layer adatoms. The data analysis excludes Q3D QDs being extrinsic surface features due to inefficient cooling after growth.Keywords
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This publication has 22 references indexed in Scilit:
- The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding2008
- Sudden nucleation versus scale invariance of InAs quantum dots on GaAsPhysical Review B, 2007
- Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001)Applied Physics Letters, 2005
- Step erosion during nucleation of InAs∕GaAs(001) quantum dotsApplied Physics Letters, 2005
- Evolution of elongated (In,Ga)As–GaAs(100) islands with low indium contentApplied Physics Letters, 2005
- Self-organized growth on GaAs surfacesMaterials Science and Engineering: R: Reports, 2004
- Ripening and annealing effects in InAs/GaAs(001) quantum dot formationJournal of Applied Physics, 2004
- Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growthPhysical Review B, 2003
- Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arraysApplied Physics Letters, 2002
- Mass transfer in Stranski–Krastanow growth of InAs on GaAsApplied Physics Letters, 1997