Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range
- 18 February 2005
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 202 (4) , 647-651
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodesApplied Physics Letters, 2004
- The effects of (NH4)2S passivation treatments on the dark current–voltage characteristics of InGaAsSb PIN detectorsJournal of Crystal Growth, 2003
- Strategy for the design of a non-cryogenic quantum infrared detectorSemiconductor Science and Technology, 2003
- Infrared detectors: status and trendsProgress in Quantum Electronics, 2003
- Sulphur passivation of the InGaAsSb/GaSb photodiodesApplied Physics Letters, 2002
- Novel Sb-based materials for uncooled infrared photodetector applicationsJournal of Crystal Growth, 2000
- Room temperature InAsSb photovoltaic midinfrared detectorApplied Physics Letters, 2000
- Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1996
- A single equation describes excitonic absorption spectra in all quantum-sized semiconductorsIEEE Journal of Quantum Electronics, 1994
- Temperature dependence of the fundamental absorption edge of mercury cadmium tellurideJournal of Applied Physics, 1990