CMOS circuits for peripheral circuit integrated poly-Si TFT LCD fabricated at low temperature below 600 degrees C
Authors:
- M. TakabatakeMTM. Takabatake
- J. OhwadaJOJ. Ohwada
- Y.A. OnoYOY.A. Ono
- A. MimuraAMA. Mimura
- N. KonishiNKN. Konishi
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (6) , 1303-1309
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Development and electrical properties of undoped polycrystalline silicon thin-film transistorsIEEE Transactions on Electron Devices, 1989
- Peripheral circuit integrated poly-Si TFT LCD with gray scale representationIEEE Transactions on Electron Devices, 1989
- High performance low-temperature poly-Si n-channel TFTs for LCDIEEE Transactions on Electron Devices, 1989
- Peripheral Drive Circuits for Poly-Si TFT LCD1987
- High-performance low-temperature poly-Si TFTs for LCD1987