Stimulated Emission and Laser Operation (cw, 77°K) Associated with Deep Isoelectronic Traps in Indirect Semiconductors
Authors:
- N. HolonyakNHN. Holonyak
- 24 January 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 28 (4) , 230-233
Abstract
We report stimulated emission associated with Zn-O-complex recombination transitions in GaP:Zn-O and with NN-pair lines in . Laser operation (cw, 77°K) characteristic of inhomogeneously broadened transitions is exhibited clearly by NN-pair lines in GaAsP and probably occurs for Zn-O pairs in GaP.
Keywords
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