Epitaxial ZnS Thin Films Grown by Single Source Chemical Vapor Deposition
Authors:
- 20 January 2000
- journal article
- letter
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 104 (6) , 1150-1152
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Single-molecule precursor chemistry for the deposition of chalcogenide(S or Se)-containing compound semiconductors by MOCVD and related methodsJournal of Materials Chemistry, 1995
- Dynamic Response of Surface-Stabilized Ferroelectric Liquid Crystals: Effect of Alignment FilmsJapanese Journal of Applied Physics, 1994
- Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivationPhysical Review Letters, 1990
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Photoelectron diffraction and surface crystallographySurface and Interface Analysis, 1989
- Geometry-DependentSurface Core-Level Excitations for Si(111) and Si(100) SurfacesPhysical Review Letters, 1980