Photoionization cross section and intersublevel transitions in a one- and two-electron spherical quantum dot with a hydrogenic impurity
Author:
- 17 January 2008
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 77 (4) , 045317
Abstract
A detailed investigation of the optical properties of a spherical quantum dot (QD) containing one and two electrons has been performed for cases with and without a hydrogenic impurity. First, the photoionization cross section of both and impurities in the QD has been calculated for an on-center impurity. Second, the intersublevel optical absorption and oscillator strength between the ground and excited states have been examined based on the computed energies and wave functions. The full numeric matrix diagonalization technique has been employed in determining sublevel energy eigenvalues and their wave functions. The Poisson-Schrödinger equations have been solved self-consistently in the Hartree approximation. In addition, quantum-mechanical many-body effects have been investigated in the local density approximation. The results are presented as a function of quantum dot radii and photon energies.
Keywords
This publication has 53 references indexed in Scilit:
- Electronic structure of a many-electron spherical quantum dot with an impurityPhysical Review B, 2005
- Shallow–deep transitions of neutral and charged donor states in semiconductor quantum dotsPhysical Review B, 2004
- The effect of a strong magnetic field on the binding energy and the photoionization cross-section in a quantum wellJournal of Physics: Condensed Matter, 1999
- Many-body effects on modulation-doped InAs/GaAs quantum dotsApplied Physics Letters, 1997
- The theory of quantum-dot infrared phototransistorsSemiconductor Science and Technology, 1996
- Effects of dielectric mismatch on shallow donors and acceptors in a spherical GaAs-Ga1-xAlxAs quantum dotJournal of Physics: Condensed Matter, 1994
- Dimensionality and potential-shape effects onandground states in quantum dotsPhysical Review B, 1994
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Self-interaction correction to density-functional approximations for many-electron systemsPhysical Review B, 1981
- Ground State of the Electron Gas by a Stochastic MethodPhysical Review Letters, 1980