Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS Technologies
- 1 November 2023
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Chinese Journal of Electronics
- Vol. 32 (6) , 1286-1292
Abstract
Total ionizing dose (TID) radiation response of the custom bandgap voltage reference (BGR) fabricated with 65 nm, 40 nm and 28 nm commercial bulk CMOS technologies is investigated. TID response is assessed employing Co-60 gamma ray source. The measurements indicate that the voltage reference is reduced by 5.67% in 28 nm, 0.56% in 40 nm and increased by 1.28% in 65 nm devices under irradiation up to 1.2 Mrad(Si) TID. After 48 hours of annealing, the voltage reference changes are just -1.84% in 28 nm, 0.14% in 40 nm and 1.14% in 65 nm. The obtained results demonstrate that the custom BGR has naturally superior TID response due to the circuit design margins.Keywords
This publication has 19 references indexed in Scilit:
- A 65 nm Rad-Hard Bandgap Voltage Reference for LHC EnvironmentIEEE Transactions on Nuclear Science, 2016
- Radiation Hardening of Voltage References Using Chopper StabilizationIEEE Transactions on Nuclear Science, 2015
- Characterization of Single-Event Transient Pulse Quenching among Dummy Gate Isolated Logic Nodes in 65 nm Twin-Well and Triple-Well CMOS TechnologiesIEEE Transactions on Nuclear Science, 2015
- Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS TechnologyIEEE Transactions on Nuclear Science, 2014
- Radiation-Hardening Technique for Voltage Reference Circuit in a Standard 130 nm CMOS TechnologyIEEE Transactions on Nuclear Science, 2014
- High temperature and radiation hard CMOS SOI sub-threshold voltage reference2013
- Novel Layout Technique for Single-Event Transient Mitigation Using Dummy TransistorIEEE Transactions on Device and Materials Reliability, 2012
- Simulation Study of the Layout Technique for P-hit Single-Event Transient Mitigation via the Source IsolationIEEE Transactions on Device and Materials Reliability, 2012
- A Radiation Hard Bandgap Reference Circuit in a Standard 0.13 $\mu$m CMOS TechnologyIEEE Transactions on Nuclear Science, 2007
- Total ionizing dose effects in bipolar devices and circuitsIEEE Transactions on Nuclear Science, 2003