Electronic structures of layered Ta2NiS5 single crystals revealed by high-resolution angle-resolved photoemission spectroscopy
Authors:
- 21 March 2018
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 6 (15) , 3976-3981
Abstract
Using high-resolution angle-resolved photoemission spectroscopy (ARPES), we systematically studied the electronic structures of quasi-one-dimensional (1D) ternary material Ta2NiS5 single crystals.Keywords
Funding Information
- National Natural Science Foundation of China (11190022, 11574280, 11674296, U1532112, U1532136)
- Chinese Academy of Sciences (XDPB01)
This publication has 30 references indexed in Scilit:
- Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2Nano Letters, 2013
- Interlayer Breathing and Shear Modes in Few-Trilayer MoS2 and WSe2Nano Letters, 2013
- Photoemission Spectroscopy of Ta2NiSe5Journal of Superconductivity and Novel Magnetism, 2012
- Orbital characters of bands in the iron-based superconductor BaFeCoAsPhysical Review B, 2011
- Excitonic Insulator State inProbed by Photoemission SpectroscopyPhysical Review Letters, 2009
- Two-dimensional atomic crystalsProceedings of the National Academy of Sciences, 2005
- Metallic versus nonmetallic properties of ternary chalcogenides: tantalum metal selenide, Ta2MSe7 (M = nickel, platinum), and tantalum nickel chalcogenide, Ta2NiX5 (X = sulfide, selenide)Inorganic Chemistry, 1987
- Physical and structural properties of the new layered compounds Ta2NiS5 and Ta2NiSe5Journal of the Less Common Metals, 1986
- Structure and physical properties of the new layered ternary chalcogenides tantalum nickel sulfide (Ta2NiS5) and tantalum nickel selenide (Ta2NiSe5)Inorganic Chemistry, 1985
- Possible Anomalies at a Semimetal-Semiconductor TransistionReviews of Modern Physics, 1968