High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium
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- 5 May 2022
- journal article
- research article
- Published by American Chemical Society (ACS) in Crystal Growth & Design
- Vol. 22 (6) , 3896-3904
Abstract
No abstract availableFunding Information
- Air Force Office of Scientific Research (FA9550-18-1-0479)
- Division of Electrical, Communications and Cyber Systems (1810041, 2019753)
This publication has 66 references indexed in Scilit:
- $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) SubstratesIEEE Electron Device Letters, 2013
- Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth MethodJapanese Journal of Applied Physics, 2008
- Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistorThin Solid Films, 2006
- Atomic Layer Deposition of Ga2O3 Films from a Dialkylamido-Based PrecursorChemistry of Materials, 2005
- Environment, health and safety issues for sources used in MOVPE growth of compound semiconductorsJournal of Crystal Growth, 2004
- Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperaturesThin Solid Films, 2002
- Synthesis of Homoleptic Gallium Alkoxide Complexes and the Chemical Vapor Deposition of Gallium Oxide FilmsChemistry of Materials, 2001
- Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPEJournal of Crystal Growth, 1991
- Optical Absorption and Photoconductivity in the Band Edge ofPhysical Review B, 1965
- THE PYROLYSIS OF TRIMETHYL GALLIUMCanadian Journal of Chemistry, 1963