Large‐Area Structure‐Selective Synthesis of Symmetry‐Broken MoSe2 and Their Broadband Nonlinear Optical Response
- 7 April 2023
- journal article
- research article
- Published by Wiley in Advanced Optical Materials
- Vol. 11 (12)
Abstract
Transition metal dichalcogenides (TMDCs) have various electronic and optical properties depending on their structure, so they can be used as a fascinating material in various applications including photonics, electronics, optoelectronics, and valleytronics. In particular, spiral TMDCs grown through the formation of screw dislocations exhibit novel electronic and optical properties different from layer‐by‐layer TMDCs. However, large‐area structure‐selective synthesis of TMDCs remains challenging. Here, this work reports for the first time the large‐area structure‐selective synthesis of monolayer MoSe2 and spiral MoSe2 using a flux‐controlled chemical vapor deposition method. Under a low MoSe2 flux condition, monolayer MoSe2 is synthesized, whereas thick spiral MoSe2 is synthesized under a high flux condition. Under a medium flux condition, both monolayer and spiral MoSe2 are synthesized. In addition, through the nonlinear optical (NLO) signal analysis of monolayer MoSe2 and spiral MoSe2, the giant enhancement of NLO signals induced by the combined effect of breaking inversion symmetry and the excitonic resonance effects in the synthesized MoSe2 is confirmed. Monolayer MoSe2 and spiral MoSe2 synthesized using this method are expected to be used as advanced optical materials for novel electronics, optoelectronics, and NLO applications.Keywords
Funding Information
- National Research Foundation of Korea (2019R1C1C1008070, 2021R1A4A1032085, 2019R1A2C1006119, 2021R1A6A1A10044950, 2009‐0082580)
This publication has 50 references indexed in Scilit:
- Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2ACS Nano, 2014
- Few-Layer MoS2: A Promising Layered SemiconductorACS Nano, 2014
- Second Harmonic Generation from Artificially Stacked Transition Metal Dichalcogenide Twisted BilayersACS Nano, 2014
- Metal-Semiconductor Barrier Modulation for High Photoresponse in Transition Metal Dichalcogenide Field Effect TransistorsScientific Reports, 2014
- Tunable Photoluminescence of Monolayer MoS2 via Chemical DopingNano Letters, 2013
- Probing Symmetry Properties of Few-Layer MoS2 and h-BN by Optical Second-Harmonic GenerationNano Letters, 2013
- Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2Optics Express, 2013
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenidesNature Nanotechnology, 2012
- Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2Nano Letters, 2012
- Atomically Thin: A New Direct-Gap SemiconductorPhysical Review Letters, 2010