All-epitaxial Co2FeSi/Ge/Co2FeSi trilayers fabricated by Sn-induced low-temperature epitaxy
- 27 January 2016
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 119 (4) , 045302
Abstract
We demonstrate low-temperature growth of all-epitaxial Co2FeSi/Ge/Co2FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co2FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co2FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a TG of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co2FeSi/Ge/Co2FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.Keywords
Funding Information
- Japan Society for the Promotion of Science (25246020)
- Ministry of Education, Culture, Sports, Science, and Technology (26103003)
This publication has 64 references indexed in Scilit:
- Enhancement in layer-by-layer growth in heteroepitaxial growth of Co on Au(111) surface by Bi surfactantJournal of Applied Physics, 2006
- Atomistic Mechanism of Surfactant-Assisted Epitaxial GrowthPhysical Review Letters, 1998
- RHEED-AES observation of Sb surface segregation during Sb-mediated Si MBE on Si(001)Journal of Crystal Growth, 1998
- Surfactant effects of Sn on heteroepitaxy by molecular beam epitaxyJournal of Crystal Growth, 1995
- Ge growth on Si using atomic hydrogen as a surfactantApplied Physics Letters, 1994
- Influence of bismuth as a surfactant on the growth of germanium on siliconJournal of Applied Physics, 1993
- Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and TeJournal of Applied Physics, 1993
- Surfactant-induced layer-by-layer growth of Ag on Ag(111)Physical Review Letters, 1992
- Surfactant epitaxy of Si on Si(111) surface mediated by a Sn layer I. Reflection electron microscope observation of the growth with and without a Sn layer mediate the step flowJournal of Crystal Growth, 1992
- Surfactants in epitaxial growthPhysical Review Letters, 1989