Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
Authors:
- Thorsten OederTOThorsten Oeder
- Alberto CastellazziAlberto Castellazzi
- Martin PfostMPMartin Pfost
- 1 May 2017
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 211-214
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Thermal Stability and Failure Mechanism of Schottky Gate AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2017
- Application-based review of GaN HFETs2014
- Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA)2014
- Carrier mobility model for GaNSolid-State Electronics, 2003