Analytical Calculation of Subthreshold Slope Increase in Short-Channel MOSFET's by Taking Drift Component into Account
Authors:
- Serge BiesemansSBSerge Biesemans
- Kristin De MeyerKMKristin De Meyer
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2S)
Abstract
Modeling of the subthreshold slope S and the threshold voltage V T has been done based on the fundamental equations governing the metal-oxide-semiconductor field-effect transistor (MOSFET). Taking the drift as well as the diffusion component of the current into account resulted in a physically complete description of the short-channel effect. The method calculates the potential from the 2D Poisson equation, the minority carrier density from the continuity equation and the weak inversion current density from the drift-diffusion model. As an example, the detailed calculation of the S factor is given. The new closed-form formula for S includes the L dependence in an accurate way.Keywords
This publication has 3 references indexed in Scilit:
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