A modified general model for sic power MOSFET in rail transportation application
Authors:
- 1 August 2017
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-5
Abstract
A compact behavioral model for SiC power MOSFET is proposed. By applying more degrees of freedom in the channel current expression, removing the drift resistance and rectifying junction capacitance mathematical model, the proposed model can accurately reproduces those static and dynamic characteristics in datasheet. The convergence problem of original model is solved and less simulation time is needed. Moreover, the model was promoted to simulate 1200V/300A power module, which is suitable for rail transportation application.Keywords
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