Deep level impurity effects on the frequency dependence of Schottky barrier capacitance
Authors:
- C.R. CrowellCCC.R. Crowell
- K. NakanoKNK. Nakano
- 30 June 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (6) , 605-610
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Recombination velocity effects on current diffusion and imref in schottky barriersSolid-State Electronics, 1971
- Capacitance Energy Level Spectroscopy of Deep-Lying Semiconductor Impurities Using Schottky BarriersJournal of Applied Physics, 1970
- Isolation of junction devices in GaAs using proton bombardmentSolid-State Electronics, 1969
- Effects of deep impurities on n+p junction reverse-biased small-signal capacitanceSolid-State Electronics, 1968
- Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctionsIEEE Transactions on Electron Devices, 1964