High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates
Authors:
- A. TallaireATA. Tallaire
- J. AchardJAJ. Achard
- A. BoussadiABA. Boussadi
- O. BrinzaOBO. Brinza
- A. GicquelAGA. Gicquel
- I.N. KupriyanovIKI.N. Kupriyanov
- Y.N. PalyanovY.N. Palyanov
- G. SakrGSG. Sakr
- J. BarjonJBJ. Barjon
- 1 January 2014
- journal article
- research article
- Published by Elsevier in Diamond and Related Materials
- Vol. 41, 34-40
Abstract
No abstract availableKeywords
This publication has 36 references indexed in Scilit:
- Diamond-based single-photon emittersReports on Progress in Physics, 2011
- Stress in (110)-textured phosphorus-doped polycrystalline diamond studied by Raman and cathodoluminescence spectroscopiesJournal of Applied Physics, 2010
- HPHT growth and x-ray characterization of high-quality type IIa diamondJournal of Physics: Condensed Matter, 2009
- Theory of the birefringence due to dislocations in single crystal CVD diamondJournal of Physics: Condensed Matter, 2009
- Dependence of CVD diamond growth rate on substrate orientation as a function of process parameters in the high microwave power density regimePhysica Status Solidi (a), 2008
- n-type diamond growth by phosphorus doping on (0 0 1)-oriented surfaceJournal of Physics D: Applied Physics, 2007
- Revealing of dislocations in diamond crystals by the selective etching methodJournal of Crystal Growth, 2006
- Vibronic model for band A emission in diamondPhysical Review B, 1997
- Twin-determined growth of diamond filmsMaterials Science and Engineering: A, 1994
- On the role of penetration twins in the morphological development of vapor-grown diamond filmsJournal of Materials Research, 1994