Self-assembling quantum dots for optoelectronic devices on Si and GaAs
Authors:
- K. EberlKEK. Eberl
- M.O. LipinskiMLM.O. Lipinski
- Y.M. ManzYMY.M. Manz
- W. WinterWWW. Winter
- N.Y. Jin-PhillippNJN.Y. Jin-Phillipp
- O.G. SchmidtOSO.G. Schmidt
- 1 January 2001
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 9 (1) , 164-174
Abstract
No abstract availableThis publication has 35 references indexed in Scilit:
- Efficient high-temperature CW lasing operationof oxide-confinedlong-wavelength InAs quantum dot lasersElectronics Letters, 2000
- The present status of quantum dot lasersPhysica E: Low-dimensional Systems and Nanostructures, 1999
- Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laserApplied Physics Letters, 1999
- Single transverse mode operation of long wavelength(~1.3 µm)InAs GaAs quantum dot laserElectronics Letters, 1999
- Self-Assembling Si/SiGe Nanostructures for Light EmittersSolid State Phenomena, 1999
- Modified Stranski–Krastanov growth in stacked layers of self-assembled islandsApplied Physics Letters, 1999
- Structural and optical properties of vertically aligned InP quantum dotsApplied Physics Letters, 1997
- Formation of carbon-induced germanium dotsApplied Physics Letters, 1997
- The δ-Doped In0.25Ga0.75As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition*Japanese Journal of Applied Physics, 1991
- Recombination dynamics in pseudomorphic and partially relaxedAs/GaAs quantum wellsPhysical Review B, 1990