Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm2/Vs
- 27 August 2010
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 22 (42) , 4764-4769
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Low-Temperature Solution-Processed Amorphous Indium Tin Oxide Field-Effect TransistorsJournal of the American Chemical Society, 2009
- High‐Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient AtmosphereAdvanced Materials, 2009
- High performance solution-processed amorphous zinc tin oxide thin film transistorJournal of Physics D: Applied Physics, 2008
- High Performance Solution-Processed Indium Oxide Thin-Film TransistorsJournal of the American Chemical Society, 2008
- Flexible Inorganic/Organic Hybrid Thin‐Film Transistors Using All‐Transparent Component MaterialsAdvanced Materials, 2007
- Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination methodApplied Physics Letters, 2007
- Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/VsPhysica Status Solidi (RRL) – Rapid Research Letters, 2006
- High Mobility Thin Film Transistors with Transparent ZnO ChannelsJapanese Journal of Applied Physics, 2003
- ZnO-based transparent thin-film transistorsApplied Physics Letters, 2003
- A ferroelectric transparent thin-film transistorApplied Physics Letters, 1996