Pore sealing of k 2.0 dielectrics assisted by self-assembled monolayers deposited from vapor phase
Authors:
- Silvia ArminiSASilvia Armini
- Jana Loyo PradoJPJana Loyo Prado
- Mikhail KrishtabMKMikhail Krishtab
- Johan SwertsJSJohan Swerts
- Patrick VerdonckPVPatrick Verdonck
- Johan MeersschautJMJohan Meersschaut
- Thierry ConardTCThierry Conard
- Michiel BlauwMBMichiel Blauw
- Herbert StruyfHSHerbert Struyf
- Mikhail R. BaklanovMBMikhail R. Baklanov
- 1 May 2014
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 120, 240-245
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Capacitance measurements and k-value extractions of low-k filmsMicroelectronic Engineering, 2010
- Low Dielectric Constant MaterialsChemical Reviews, 2009
- Growth Kinetics and Morphology of Self-Assembled Monolayers Formed by Contact Printing 7-Octenyltrichlorosilane and Octadecyltrichlorosilane on Si(100) WafersLangmuir, 2004
- Vapor phase anti-stiction coatings for MEMSIEEE Transactions on Device and Materials Reliability, 2003
- Extreme ultraviolet spectroscopy of helium–hydrogen plasmaJournal of Physics D: Applied Physics, 2003
- MECHANISMS AND KINETICS OF SELF-ASSEMBLED MONOLAYER FORMATIONAnnual Review of Physical Chemistry, 2001
- Tribology of MEMSMRS Bulletin, 2001
- In Search of Low- k DielectricsScience, 1999
- Formation and Structure of Self-Assembled MonolayersChemical Reviews, 1996
- Effect of Surface Water and Base Catalysis on the Silanization of Silica by (Aminopropyl)alkoxysilanes Studied by X-ray Photoelectron Spectroscopy and 13C Cross-Polarization/Magic Angle Spinning Nuclear Magnetic ResonanceLangmuir, 1994