Origin of the Anomalous Electrical Transports in Quasi-One-Dimensional Ta2NiSe7

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Abstract
Exploration of exotic transport behavior is of great interest and importance for revealing the properties of the CDW phase of quasi-one-dimensional Ta2NiSe7. We report the anisotropic electrical transport properties of Ta2NiSe7 single crystals in the CDW phase. The anisotropic constant (γ = ρb/ρc) increased rapidly at TCDW = 60 K upon cooling. The results of the Hall resistivity show that both the concentrations and mobilities of carriers change abruptly at TCDW. The out-of-plane AMR exhibits C2 and C4 symmetry components while the in-plane AMR exhibits C2, C4, and C6 at the CDW state. The planar Hall effect is observed in Ta2NiSe7 at low temperature, which is suggested to originate from the anisotropic orbital magnetoresistance. The calculated results show that the Fermi surface of Ta2NiSe7 was slightly reconstructed due to the CDW transition. This work highlights the enhancement of Fermi surface anisotropy during CDW formation and provides a novel approach to study the CDW materials.
Funding Information
  • Systematic Fundamental Research Program Leveraging Major Scientific and Technological Infrastructure, Chinese Academy of Sciences (JZHKYPT-2021-08)

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