Potential of NiOx/Nickel Silicide/n+ Poly-Si Contact for Perovskite/TOPCon Tandem Solar Cells
Authors:
- Jiryang KimJiryang Kim
- Dowon PyunDPDowon Pyun
- Dongjin ChoiDCDongjin Choi
- Seok-Hyun JeongSJSeok-Hyun Jeong
- Changhyun LeeCLChanghyun Lee
- Jiyeon HyunJHJiyeon Hyun
- Ha Eun LeeHLHa Eun Lee
- Sang-Won LeeSLSang-Won Lee
- Hoyoung SongHSHoyoung Song
- Solhee LeeSLSolhee Lee
- Donghwan KimDKDonghwan Kim
- Yoonmook KangYoonmook Kang
Open Access
Abstract
In this work, nickel silicide was applied to tandem solar cells as an interlayer. By the process of thermal evaporation, a layer of NiOx, hole transport layer (HTL) was deposited on n+ poly-Si layer directly. Nickel silicide was simultaneously formed by nickel diffusion from NiOx to n+ poly-Si layer during the deposition and annealing process. The I–V characteristics of NiOx/n+ poly-Si contact with nickel silicide showed ohmic contact and low contact resistivity. This structure is expected to be more advantageous for electrical connection between perovskite top cell and TOPCon bottom cell compared to the NiOx/TCO/n+ poly-Si structure showing Schottky contact. Furthermore, nickel silicide and Ni-deficient NiOx thin film formed by diffusion of nickel can improve the fill factor of the two sub cells. These results imply the potential of a NiOx/nickel silicide/n+ poly-Si structure as a perovskite/silicon tandem solar cell interlayer.Keywords
Funding Information
- Korea Institute of Energy Technology Evaluation and Planning (20193010014530, 20204010600470)
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