Curvature-compensated BiCMOS bandgap with 1-V supply voltage
Authors:
- P. MalcovatiP. Malcovati
- F. MalobertiFMF. Maloberti
- C. FiocchiCFC. Fiocchi
- M. PruzziMPM. Pruzzi
- 1 July 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 36 (7) , 1076-1081
Abstract
We present a bandgap circuit capable of generating a reference voltage of 0.53 V. The circuit, implemented In a submicron BiCMOS technology, operates with a supply voltage of 1 V, consuming 92 /spl mu/W at room temperature. In the bandgap circuit proposed, we use a nonconventional operational amplifier which achieves virtually zero systematic offset, operating directly from the 1-V power supply. The bandgap architecture used allows a straightforward implementation of the curvature compensation method. The proposed circuit achieves 7.5 ppm/K of temperature coefficient and 212 ppm/V of supply voltage dependence, without requiring additional operational amplifiers or complex circuits for the curvature compensation.Keywords
This publication has 7 references indexed in Scilit:
- A CMOS bandgap reference circuit with sub-1-V operationIEEE Journal of Solid-State Circuits, 1999
- A 1.1-V current-mode and piecewise-linear curvature-corrected bandgap referenceIEEE Journal of Solid-State Circuits, 1998
- Exponential curvature-compensated BiCMOS bandgap referencesIEEE Journal of Solid-State Circuits, 1994
- A curvature-corrected low-voltage bandgap referenceIEEE Journal of Solid-State Circuits, 1993
- A V/SUB be/(T) model with application to bandgap reference designIEEE Journal of Solid-State Circuits, 1985
- A precision curvature-compensated CMOS bandgap referenceIEEE Journal of Solid-State Circuits, 1983
- Accurate analysis of temperature effects in I/SUB c/V/SUB BE/ characteristics with application to bandgap reference sourcesIEEE Journal of Solid-State Circuits, 1980