p-Type transparent amorphous oxide thin-film transistors using low-temperature solution-processed nickel oxide
Authors:
- Wangying XuWXWangying Xu
- Junpeng ZhangJZJunpeng Zhang
- Yujia LiYLYujia Li
- Lingjiao ZhangLZLingjiao Zhang
- Lin ChenLCLin Chen
- Deliang ZhuDZDeliang Zhu
- Peijiang CaoPCPeijiang Cao
- Wenjun LiuWLWenjun Liu
- Shun HanSHShun Han
- Xinke LiuXLXinke Liu
- Youming LuYLYouming Lu
- 1 October 2019
- journal article
- research article
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 806, 40-51
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (61704111, 51371120)
- Natural Science Foundation of Guangdong Province (2017A030310524)
- Science and Technology Foundation of Shenzhen (JCYJ20170817100611468, JCYJ20170818143417082)
- Natural Science Foundation of SZU (827000243, 2017001)
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