Atomic Step Flow on a Nanofacet
Top Cited Papers
- 19 October 2018
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 121 (16) , 166101
Abstract
Crystal growth often proceeds by atomic step flow. When the surface area available for growth is limited, the nucleation and progression of the steps can be affected. This issue is particularly relevant to the formation of nanocrystals. We examine the case of Au-catalyzed GaAs nanowires, which we grow in a transmission electron microscope. Our in situ observations show that atomic layers nucleate at the periphery of the interface between the nanowire and the catalyst droplet. From this starting location, the atomic step flows within a restricted area of hexagonal shape. At specific partial coverages, the monolayer configuration changes abruptly. A simple model based on the geometry of the system and its edge energies explains these observations. In particular, we observe an inversion of the step curvature which reveals that the effective energy per unit length of monolayer edge is much lower at the interface periphery than inside the catalyst droplet.Keywords
Funding Information
- Agence Nationale de la Recherche (10-EQPX-0050)
This publication has 18 references indexed in Scilit:
- Interface dynamics and crystal phase switching in GaAs nanowiresNature, 2016
- Cyclic Supersaturation and Triple Phase Boundary Dynamics in Germanium Nanowire GrowthThe Journal of Physical Chemistry C, 2011
- Step-Flow Kinetics in Nanowire GrowthPhysical Review Letters, 2010
- Structure, Growth Kinetics, and Ledge Flow during Vapor−Solid−Solid Growth of Copper-Catalyzed Silicon NanowiresNano Letters, 2009
- An Empirical Potential Approach to Wurtzite–Zinc-Blende Polytypism in Group III–V Semiconductor NanowiresJapanese Journal of Applied Physics, 2006
- Ga-rich GaAs(0 0 1) surfaces observed by STM during high-temperature annealing in MBEJournal of Crystal Growth, 2003
- Crystal Structure Change of GaAs and InAs Whiskers from Zinc-Blende to Wurtzite TypeJapanese Journal of Applied Physics, 1992
- Local dimer exchange in surfactant-mediated epitaxial growthPhysical Review Letters, 1992
- Direct observation of the phase transition between the (7 × 7) and (1 × 1) structures of clean (111) silicon surfacesSurface Science, 1981
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964