Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO2 as a gate dielectric
Open Access
- 1 June 2007
- journal article
- Published by Springer Nature in Bulletin of Materials Science
- Vol. 30 (3) , 247-254
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Preparation and characteristic of ZnO thin film with high and low resistivity for an application of solar cellThin Solid Films, 2006
- Preparation and characterization of transparent ZnO thin films obtained by spray pyrolysisThin Solid Films, 2003
- Photoprotective zinc oxide coatings on polyethylene terephthalate filmsMaterials Science and Engineering: B, 2001
- Homoepitaxial growth mechanism of ZnO(0001): Molecular-dynamics simulationsPhysical Review B, 2000
- ZrO 2 film growth by chemical vapor deposition using zirconium tetra- tert- butoxideThin Solid Films, 1999
- Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (011̄2) sapphire by metalorganic chemical vapor depositionJournal of Applied Physics, 1999
- Structural properties and quasiparticle band structure of zirconiaPhysical Review B, 1998
- Optically pumped lasing of ZnO at room temperatureApplied Physics Letters, 1997
- Experimental and theoretical determination of the electronic structure and optical properties of three phases ofPhysical Review B, 1994
- The chemical vapour deposition and characterization of ZrO2 films from organometallic compoundsThin Solid Films, 1977