Suppression of bipolar conduction via bandgap engineering for enhanced thermoelectric performance of p-type Bi0.4Sb1.6Te3 alloys
Authors:
- Hyun-Sik KimHKHyun-Sik Kim
- Kyu Hyoung LeeKLKyu Hyoung Lee
- Joonyeon YooJYJoonyeon Yoo
- Weon Ho ShinWeon Ho Shin
- Jong Wook RohJRJong Wook Roh
- Jae-Yeol HwangJHJae-Yeol Hwang
- Sung Wng KimSung Wng Kim
- Sang-Il KimSang-Il Kim
- 1 April 2018
- journal article
- research article
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 741, 869-874
Abstract
No abstract availableKeywords
Funding Information
- Samsung (SRFC-MA1701-05)
- Samsung
This publication has 8 references indexed in Scilit:
- Effect of Substitutional Pb Doping on Bipolar and Lattice Thermal Conductivity in p-Type Bi0.48Sb1.52Te3Materials, 2017
- Fe-Doping Effect on Thermoelectric Properties of p-Type Bi0.48Sb1.52Te3Materials, 2015
- Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and AgJournal of Electronic Materials, 2014
- Enhancement of the Thermoelectric Performance of Bi0.4Sb1.6Te3 Alloys by In and Ga DopingJournal of Electronic Materials, 2012
- Preparation and thermoelectric properties of p-type (Ga2Te3)x–(Bi0.5Sb1.5Te3)1−x (x=0–0.2) alloys prepared by spark plasma sinteringIntermetallics, 2007
- Effect ofcorrections in the electronic structure ofcompoundsPhysical Review B, 2003
- Estimation of the thermal band gap of a semiconductor from seebeck measurementsJournal of Electronic Materials, 1999
- Model for Lattice Thermal Conductivity at Low TemperaturesPhysical Review B, 1959