Charge carrier mobility in semiconductor solid solutions and percolation phenomena
Authors:
Open Access
- 1 June 2017
- conference paper
- Published by IOP Publishing in Journal of Physics: Conference Series
- Vol. 864 (1) , 012027
Abstract
The existence of a range of an anomalous growth in charge carrier mobility under the transition to heavy doping is established for Bi2Te3 -Sb2Te3 solid solutions. This confirms our suggestion about the universal character of critical phenomena accompanying the transition from impurity discontinuum to impurity continuum. The experimental results are analyzed in terms of percolation theory taking into account alloy scattering and spatial correlations of impurity centers.Keywords
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