Abstract
In this letter, the modified elliptic low-pass filtering (LPF) matching network (MN) is proposed for harmonic suppression of a wideband gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) power amplifier (PA) at millimeter-wave (mm-wave). To investigate the effectiveness of the method at mm-wave, a three-stage 25–31-GHz GaN MMIC PA is designed using a commercial 150-nm GaN HEMT foundry process, with a mask area of $4.5\times2.6$ mm 2 . Simulated results show that the second harmonic of the PA can be effectively suppressed by using the elliptic LPF MN. Experimental results show that the realized MMIC PA achieves a saturated power-added efficiency (PAE) higher than 26.1% from 25 to 31 GHz, with a peak PAE of 31.5% at 29 GHz. The saturated gain and output power are more than 20 and 34 dBm within the band, respectively.
Funding Information
  • Key research and development plan of Jiangsu Province (BE2020005)
  • National Natural Science Foundation of China (62171129, 61861136002, 62022025, 62101116)

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