Microstructure and electromigration in copper damascene lines
Authors:
- Lucile ArnaudLALucile Arnaud
- G. TartavelGTG. Tartavel
- D. MariolleDMD. Mariolle
- Y. GobilYGY. Gobil
- I. TouetITI. Touet
- 1 January 2000
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 40 (1) , 77-86
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Influence of thermal heating effect on pulsed DC electromigration result analysisMicroelectronics Reliability, 1998
- Electromigration failure modes in damascene copper interconnectsMicroelectronics Reliability, 1998
- Influence of thermal heating effect on pulsed DC electromigrationMicroelectronics Reliability, 1997
- Electromigration in 0.25 μm wide Cu line on WThin Solid Films, 1997
- The Microstructure and Electromigration Performance of Damascene-Fabricated Aluminum InterconnectsMRS Proceedings, 1997
- On the unusual electromigration behavior of copper interconnectsJournal of Applied Physics, 1996
- Double-Level Cu Inlaid Interconnects with Simultaneously Filled Via PlugsJapanese Journal of Applied Physics, 1996
- Electromigration and Diffusion in Pure Cu And Cu(Sn) AlloysMRS Proceedings, 1996
- Electromigration in copper conductorsThin Solid Films, 1995