From Solid-State Dewetting of Ultrathin, Compressively Strained Silicon–Germanium-on-Insulator Films to Mastering the Stoichiometry of Si1–xGex Nanocrystals
Authors:
- 25 March 2016
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 120 (13) , 7412-7420
Abstract
No abstract availableKeywords
Funding Information
- Ministère de l'Enseignement Supérieur et de la Recherche
This publication has 53 references indexed in Scilit:
- Measuring the lifetime of silicon nanocrystal solar cell photo-carriers by using Kelvin probe force microscopy and x-ray photoelectron spectroscopyNanotechnology, 2014
- Growth and self-organization of SiGe nanostructuresPhysics Reports, 2013
- Quantum confinement in Si and Ge nanostructuresJournal of Applied Physics, 2012
- Fabrication of sub-100 nm patterns in SiO2 templates by electron-beam lithography for the growth of periodic III–V semiconductor nanostructuresNanotechnology, 2006
- Ultra-large-scale syntheses of monodisperse nanocrystalsNature Materials, 2004
- One‐Dimensional Nanostructures: Synthesis, Characterization, and ApplicationsAdvanced Materials, 2003
- Effect of patterning on thermal agglomeration of ultrathin silicon-on-insulator layerApplied Surface Science, 2001
- Production of ordered silicon nanocrystals by low-energy ion sputteringApplied Physics Letters, 2001
- Nanoimprint lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996
- Semiconductor Clusters, Nanocrystals, and Quantum DotsScience, 1996