Hot-electron emission from silicon into silicon dioxide
Author:
- T.H. NingTNT.H. Ning
- 1 January 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (1) , 273-282
Abstract
No abstract availableKeywords
This publication has 76 references indexed in Scilit:
- Threshold instability in IGFET’s due to emission of leakage electrons from silicon substrate into silicon dioxideApplied Physics Letters, 1976
- Hot-carrier instability in IGFET’sApplied Physics Letters, 1975
- Atmos—An electrically reprogrammable read-only memory deviceIEEE Transactions on Electron Devices, 1974
- Electrically reprogrammable nonvolatile semiconductor memoryIEEE Journal of Solid-State Circuits, 1972
- MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTUREApplied Physics Letters, 1971
- Electron gate currents and threshold stability in the n-channel stacked gate MOS tetrodeIEEE Transactions on Electron Devices, 1971
- Avalanche degradation of hFEIEEE Transactions on Electron Devices, 1970
- A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate OxideJapanese Journal of Applied Physics, 1970
- THE INTRODUCTION OF CHARGE IN SiO2 AND THE INCREASE OF INTERFACE STATES DURING BREAKDOWN OF EMITTER-BASE JUNCTION OF GATED TRANSISTORSApplied Physics Letters, 1969
- EXCESS CURRENT GENERATION DUE TO REVERSE BIAS P-N JUNCTION STRESSApplied Physics Letters, 1968