Abstract
The integration of a pixelated Fabry–Pérot filter array onto the image sensor enables on-chip snapshot multispectral imaging, significantly reducing the size and weight of conventional spectral imaging equipment. However, a traditional Fabry–Pérot cavity, based on metallic or dielectric layers, exhibits a narrow bandwidth, which restricts their utility in broader applications. In this work, we propose novel Fabry–Pérot filter structures that employ dielectric thin films for phase modulation, enabling single-peak filtering across a broad operational wavelength range from 400 nm to 1100 nm. The proposed structures are easy to fabricate and compatible with complementary metal-oxide-semiconductor (CMOS) image sensors. Moreover, the structures show low sensitivity to oblique incident angles of up to 30° with minimal wavelength shifts. This advanced Fabry–Pérot filter design provides a promising pathway for expanding the operational wavelength of snapshot spectral imaging systems, thereby potentially extending their application across numerous related fields.
Funding Information
  • National Natural Science Foundation of China (62105360, 61975231, 62061160488)
  • National Key Research and Development Program of China (2021YFC2202002, 2020FFC2200200)
  • Opening Funding of National Key Laboratory of Electromagnetic Space Security

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