On the photoionization of deep impurity centers in semiconductors
Author:
- G. LucovskyGLG. Lucovsky
- 31 December 1993
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 88 (11-12) , 879-882
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Photoionization Cross Section of NeonPhysical Review B, 1965
- Absorption spectrum of arsenic doped siliconJournal of Physics and Chemistry of Solids, 1958
- Absorption spectra of impurities in silicon—IJournal of Physics and Chemistry of Solids, 1956
- Optical Properties of Indium-Doped SiliconPhysical Review B, 1955