Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch
Authors:
- Kevin M. WarrenKWKevin M. Warren
- Brian D. SierawskiBSBrian D. Sierawski
- Robert A. ReedRRRobert A. Reed
- Robert A. WellerRWRobert A. Weller
- Carl CarmichaelCCCarl Carmichael
- Austin LeseaALAustin Lesea
- Marcus H. MendenhallMMMarcus H. Mendenhall
- Paul E. DoddPDPaul E. Dodd
- Ron D. SchrimpfRSRon D. Schrimpf
- Lloyd W. MassengillLMLloyd W. Massengill
- Tan HoangTHTan Hoang
- Hsing WanHWHsing Wan
- 12 December 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 54 (6) , 2419-2425
Abstract
Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional single sensitive volume or classical rectangular parallelepiped model of single event upset. TCAD and SPICE analysis demonstrate a SEU mechanism dominated by multiple node charge collection. Monte Carlo simulation is used to model the response and predict an on-orbit error rate.Keywords
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