Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits
Authors:
- Shujun YeShujun Ye
- Kikuo YamabeKYKikuo Yamabe
- Tetsuo EndohTETetsuo Endoh
Open Access
- 1 November 2021
- journal article
- research article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 134
Abstract
No abstract availableKeywords
Funding Information
- Japan Society for the Promotion of Science (JP20K14772)
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