Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates
Authors:
- D.K. WickendenDWD.K. Wickenden
- K.R. FaulknerKFK.R. Faulkner
- R.W. BranderRBR.W. Brander
- B.J. IsherwoodBIB.J. Isherwood
- 1 May 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 9, 158-164
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Optical Absorption and Vacuum-Ultraviolet Reflectance of GaN Thin FilmsPhysical Review Letters, 1970
- Gallium nitride formed by vapour deposition and by conversion from gallium arsenideJournal of Materials Science, 1970
- Study of the Morphology of Epitaxial CdS FilmsJournal of Applied Physics, 1970
- Techniques for Melt-Growth of Luminescent Semiconductor Crystals under PressureJournal of the Electrochemical Society, 1970
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- Vaporization Catalysis. The Decomposition of Gallium Nitride1The Journal of Physical Chemistry, 1965
- Vapor Phase Equilibria in the Gallium-Chlorine and Gallium Arsenide-Chlorine SystemsJournal of the Electrochemical Society, 1965
- Preparation, Stability, and Luminescence of Gallium NitrideJournal of the Electrochemical Society, 1962
- Über die Kristallstrukturen von Cu3N, GaN und InN Metallamide und MetallnitrideZeitschrift für anorganische und allgemeine Chemie, 1938
- Beiträge zur systematischen Verwandtschaftslehre. 58. Beiträge zur Kenntnis der Verbindungen des Galliums und Indiums. VIII. Die Ammoniakate der GalliumhalogenideZeitschrift für anorganische und allgemeine Chemie, 1932