Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors
Open Access
- 5 December 2022
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 121 (23) , 233503
Abstract
Combining low-dimensional layers of dissimilar metal oxide materials to form a heterojunction structure offers a potent strategy to improve the performance and stability of thin-film transistors (TFTs). Here, we study the impact of channel layer thicknesses on the operating characteristics of In2O3/ZnO heterojunction TFTs prepared via sputtering. The conduction band offset present at the In2O3/ZnO heterointerface affects the device's operating characteristics, as is the thickness of the individual oxide layers. The latter is investigated using a variety of experimental and computational modeling techniques. An average field-effect mobility (μFE) of >50 cm2 V−1 s−1, accompanied by a low threshold voltage and a high on/off ratio (∼108), is achieved using an optimal channel configuration. The high μFE in these TFTs is found to correlate with the presence of a quasi-two-dimensional electron gas at the In2O3/ZnO interface. This work provides important insight into the operating principles of heterojunction metal oxide TFTs, which can aid further developments.Keywords
Funding Information
- King Abdullah University of Science and Technology (OSR-2018-CARF/CCF-3079)
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