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Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-$\kappa$ Dielectric
Publication with shared reference
10.1109/led.2018.2856934
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Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-$\kappa$ Dielectric
Publication with shared reference
10.1109/led.2018.2856934
Publications with shared reference:
Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-$\kappa$ Dielectric
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