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Publications
Improved Read Stability and Writability of Negative Capacitance FinFET SRAM Cell for Subthreshold Operation
Publication with shared reference
10.1109/iscas.2019.8702126
Home
Publications
Improved Read Stability and Writability of Negative Capacitance FinFET SRAM Cell for Subthreshold Operation
Publication with shared reference
10.1109/iscas.2019.8702126
Publications with shared reference:
Improved Read Stability and Writability of Negative Capacitance FinFET SRAM Cell for Subthreshold Operation
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