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Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate
Publication with shared reference
10.1063/1.5121637
Home
Publications
Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate
Publication with shared reference
10.1063/1.5121637
Publications with shared reference:
Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate
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