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A 126 μW Readout Circuit in 65 nm CMOS With Successive Approximation-Based Thresholding for Domain Wall Magnet-Based Random Number Generator
Publication with shared reference
10.1109/jsen.2020.2980021
Home
Publications
A 126 μW Readout Circuit in 65 nm CMOS With Successive Approximation-Based Thresholding for Domain Wall Magnet-Based Random Number Generator
Publication with shared reference
10.1109/jsen.2020.2980021
Publications with shared reference:
A 126
μ
W Readout Circuit in 65 nm CMOS With Successive Approximation-Based Thresholding for Domain Wall Magnet-Based Random Number Generator
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