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Why do electron traps at E C –0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers?
Publication with shared reference
10.35848/1347-4065/abb9ca
Home
Publications
Why do electron traps at E C –0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers?
Publication with shared reference
10.35848/1347-4065/abb9ca
Publications with shared reference:
Why do electron traps at
E
C
–0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers?
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