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  3. Influence of thickness of poly(3-hexylthiophene-2,5-diyl) hole transport layer on electrical characteristics of lead sulfide quantum dot-based shortwave infrared photodiodes
  4. Publication with shared reference
  5. 10.1007/s40042-021-00265-1
  1. Home
  2. Publications
  3. Influence of thickness of poly(3-hexylthiophene-2,5-diyl) hole transport layer on electrical characteristics of lead sulfide quantum dot-based shortwave infrared photodiodes
  4. Publication with shared reference
  5. 10.1007/s40042-021-00265-1

Publications with shared reference:

Influence of thickness of poly(3-hexylthiophene-2,5-diyl) hole transport layer on electrical characteristics of lead sulfide quantum dot-based shortwave infrared photodiodes

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