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Investigation of Isolation Approaches and the Stoichiometry of SiNxPassivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors
Publication with shared reference
10.1002/pssa.202200533
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Investigation of Isolation Approaches and the Stoichiometry of SiNxPassivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors
Publication with shared reference
10.1002/pssa.202200533
Publications with shared reference:
Investigation of Isolation Approaches and the Stoichiometry of SiN
x
Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors
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