The manipulation of the anomalous Hall effect (AHE) by controlling magnetization is of great interest in condensed matter physics due to its potential application for the practical design of spintronic devices. In this study, we report a combined experimental and theoretical investigation of the AHE in the MnSb manganese pnictide. Temperature-dependent magnetization measurement indicates spin reorientation transition (SRT) temperature at

\sim

120 K (

T_{SR}

). Magnetotransport data shows that negative magnetoresistance increases from room temperature up to SRT temperature 120 K, then decreases and becomes positive at very low temperatures. The anomalous Hall conductivity (AHC) shows temperature-independent behavior from room temperature to

T_{SR}

followed by a drop and sign reversal at low temperatures. Detailed scaling analysis of anomalous Hall data suggests that the AHE above

T_{SR}

is primarily governed by the intrinsic Berry curvature and the obtained value of intrinsic AHC is about 310 S/cm. In contrast, below

T_{SR,}

the extrinsic skew scattering becomes the dominant contributor to the AHE compared to the intrinsic Berry curvature and the obtained value of intrinsic AHC is about–28 S/cm. The first-principles calculations reveal that changes in the sign and magnitude of the intrinsic AHC are attributed to modifications in the Berry curvature when the magnetic moment undergoes rotation from the

c

-axis to the

a b

-plane. Our study yields a compound exhibiting large AHC and offers an insightful comprehension of the anisotropic behavior of AHE due to the modification of Berry curvature.

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